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page 1 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 www.psemi.com esd the pe423641 is a harp? technology-enhanced reflective sp4t rf switch. it has received aec-q100 grade 2 certification and meets the quality and performance standards that makes it suitable for use in harsh automotive environments. it is designed to cover a wide range of wireless applications from 50 mhz through 3 ghz such as cellular antenna band switching, automotive infotainment and traffic safety applications. no blocking capacitors are required if dc voltage is not present on the rf ports. the pe423641 is manufactured on peregrine?s ultracmos ? process, a patented variation of silicon-on- insulator (soi) technology on a sapphire substrate, offering excellent rf performance. peregrine?s harp? technology enhancements deliver high linearity and excellent harmonics performance. it is an innovative feature of the ultracmos process, offering the performance of gaas with the economy and integration of conventional cmos. product specification ultracmos ? sp4t rf switch 50?3000 mhz product description pe423641 features ?? aec-q100 grade 2 certified ?? supports operating temperature up to +105c ?? harp tm technology enhancements provide excellent linearity ?? low harmonics of 2fo = ?83 dbc and 3fo = ?77 dbc @ +35 dbm ?? imd3 of ?111 dbm @ wcdma band 1 ?? iip3 of 68 dbm ?? low insertion loss ?? 0.50 db @ 1000 mhz ?? 0.65 db @ 2200 mhz ?? high isolation ?? 32 db @ 1000 mhz ?? 25 db @ 2200 mhz ?? high esd performance ?? 2 kv hbm on all pins ?? 100v mm on all pins ?? 1 kv cdm on all pins ?? integrated decoder for 2-pin control ?? accepts 1.8v and 2.75v levels figure 1. functional diagram figure 2. package type 16-lead 3 x 3 mm qfn 71-0094
product specification pe423641 page 2 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 ultracmos ? rfic solutions table 1. electrical specifications @ +25c, v dd = 2.75v (z s = z l = 50 ? ) parameter path condition min typ max unit operational frequency 50 3000 mhz insertion loss (symmetric ports) rfc?rfx 50?1000 mhz 0.50 0.60 db 1000?2200 mhz 0.65 0.75 db 2200?2700 mhz 0.80 0.95 db 2700?3000 mhz 0.95 1.15 db isolation rfc?rfx 50?1000 mhz 30 32 db 1000?2200 mhz 23 25 db 2200?2700 mhz 21 23 db 2700?3000 mhz 20 22 db return loss (active ports) rfc?rfx 50?1000 mhz 24 db 1000?2200 mhz 19 db 2200?2700 mhz 16 db 2700?3000 mhz 14 db return loss (common ports) rfc?rfx 50?1000 mhz 23 db 1000?2200 mhz 16 db 2200?2700 mhz 14 db 2700?3000 mhz 13 db 2nd harmonic rfx +35 dbm output power, 850/900 mhz ?83 ?80 dbc +33 dbm output power, 1800/1900 mhz ?85 ?78 dbc 3rd harmonic rfx +35 dbm output power, 850/900 mhz ?77 ?73.5 dbc +33 dbm output power, 1800/1900 mhz ?78 ?72.5 dbc imd3 rf measured at 2.14 ghz at ant port, input +20 dbm cw signal at 1.95 ghz and ?15 dbm cw signal at 1.76 ghz ?111 dbm input ip2 rfc?rfx 50?3000 mhz 115 dbm input ip3 rfc?rfx 50?3000 mhz 68 dbm input 0.1 db compression point 1 rfc?rfx 50?3000 mhz 37 dbm switching time 50% ctrl to 90% or 10% rf 1 2 s note 1: input 0.1 db compression point is a linearity figure of merit. refer to table 3 for the operating rf input power (50 ? ).
product specification pe423641 page 3 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 www.psemi.com table 1a. electrical specifications @ ?40 to + 105c, v dd = 2.75v (z s = z l = 50 ? ) note 1: input 0.1 db compression point is a linearity figure of merit. refer to table 3 for the operating rf input power (50 ? ). parameter path condition min typ max unit operational frequency 50 3000 mhz insertion loss (symmetric ports) rfc?rfx 50?1000 mhz 0.50 0.75 db 1000?2200 mhz 0.65 0.90 db 2200?2700 mhz 0.80 1.10 db 2700?3000 mhz 0.95 1.30 db isolation rfc?rfx 50?1000 mhz 30 32 db 1000?2200 mhz 23 25 db 2200?2700 mhz 21 23 db 2700?3000 mhz 20 22 db return loss (active ports) rfc?rfx 50?1000 mhz 24 db 1000?2200 mhz 19 db 2200?2700 mhz 16 db 2700?3000 mhz 14 db return loss (common ports) rfc?rfx 50?1000 mhz 23 db 1000?2200 mhz 16 db 2200?2700 mhz 14 db 2700?3000 mhz 13 db 2nd harmonic rfx +35 dbm output power, 850/900 mhz ?83 ?76 dbc +33 dbm output power, 1800/1900 mhz ?85 ?74 dbc 3rd harmonic rfx +35 dbm output power, 850/900 mhz ?77 ?69.5 dbc +33 dbm output power, 1800/1900 mhz ?78 ?68.5 dbc imd3 rf measured at 2.14 ghz at ant port, input +20 dbm cw signal at 1.95 ghz and ?15 dbm cw signal at 1.76 ghz ?111 dbm input ip2 rfc?rfx 50?3000 mhz 115 dbm input ip3 rfc?rfx 50?3000 mhz 68 dbm input 0.1 db compression point 1 rfc?rfx 50?3000 mhz 37 dbm switching time 50% ctrl to 90% or 10% rf 1 2 s
product specification pe423641 page 4 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 ultracmos ? rfic solutions figure 3. pin configuration (top view) table 2. pin descriptions pin # pin name description 1, 5, 7, 9, 10, 12, 14, 16 n/c no connect 2 v dd supply voltage 3 v2 digital control logic input 2 4 v1 digital control logic input 1 6 rf4 1 rf port 8 rf3 1 rf port 11 rfc 1 rf common 13 rf1 1 rf port 15 rf2 1 rf port pad gnd exposed pad: ground for proper operation note 1: rf pins 6, 8, 13, and 15 must be at 0 vdc. the rf pins do not require dc blocking capacitors for proper oper ation if the 0 vdc requirement is met. table 3. operating ranges note 1: 100% duty cycle, all bands, 50 ? parameter symbol min typ max unit supply voltage v dd 2.65 2.75 3.3 v supply current (v dd = 2.75v, +25 c only) i dd 13 50 a digital input high (v1, v2) v ih 1.4 v dd v digital input low (v1, v2) v il 0 0.4 v rf input power, cw 1 p max,cw +35 dbm operating temperature range t op ?40 +25 +105 c table 4. absolute maximum ratings notes: 1. human body m odel (mil-std-883 method 3015) 2. machine model (jedec jesd22-a115) 3. charged device model (jedec jesd22-c101) exceeding absolute maximum ratings may cause permanent damage. operation should be restricted to the limits in the operating ranges table. operation between operating range maximum and absolute maximum for extended periods may reduce reliability. parameter/condition symbol min max unit supply voltage v dd ?0.3 3.7 v digital input voltage (v1, v2) v i ?0.3 3.7 v rf input power, max p max,abs +37 dbm storage temperature range t st -65 +150 c esd voltage hbm 1 , all pins v esd ,hbm 2000 v esd voltage mm 2 , all pins v esd,mm 100 v esd voltage cdm 3 , all pins v esd,cdm 1000 v
product specification pe423641 page 5 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 www.psemi.com table 5. truth table path v2 v1 rfc?rf1 0 0 rfc?rf2 1 0 rfc?rf3 0 1 rfc?rf4 1 1 electrostatic discharge (esd) precautions when handling this ultracmos device, observe the same precautions that you would use with other esd-sensitive devices. although this device contains circuitry to protect it from damage due to esd, precautions should be taken to avoid exceeding the specified rating. latch-up avoidance unlike conventional cmos devices, ultracmos devices are immune to latch-up. moisture sensitivity level the moisture sensitivity level rating for the pe423641 in the 16-lead 3x3 mm qfn package is msl1. switching frequency the pe423641 has a maximum 25 khz switching frequency. switching frequency describes the time duration between switching events. switching time is the time duration between the point the control signal reaches 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. switching time is provided in table 1 and table 1a .
product specification pe423641 page 6 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 ultracmos ? rfic solutions figure 5. insertion loss vs v dd (rfc?rfx) figure 4. insertion loss vs temp (rfc?rfx) figure 7. return loss vs v dd (active port) figure 6. return loss vs temp (active port) typical performance data @ +25c and v dd = 2.75v, unless otherwise specified figure 8. return loss vs temp (common port) figure 9. return loss vs v dd (common port)
product specification pe423641 page 7 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 www.psemi.com figure 11. isolation vs v dd (rfc?rfx) figure 10. isolation vs temp (rfc?rfx) typical performance data @ +25c and v dd = 2.75v, unless otherwise specified
product specification pe423641 page 8 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 ultracmos ? rfic solutions evaluation kit the sp4t switch evaluation board was designed to ease customer evaluation of peregrine?s pe423641. the rf common port is connected through a 50 ? transmission line via the top sma connector, j1. rf1, rf2, rf3 and rf4 are connected through 50 ? transmission lines via sma connectors j3, j5, j2 and j4, respectively. a through 50 ? transmission is available via sma connectors j6 and j7. this transmission line can be used to estimate the loss of the pcb over the environmental conditions being evaluated. the board is constructed of a four metal layer fr4 material with a total thickness of 62 mils. the middle layers provide ground for the transmission lines. the transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 32 mils, trace gaps of 25 mils, and metal thickness of 2.1 mils. figure 12. evaluation board layouts prt-50900
product specification pe423641 page 9 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 www.psemi.com through li ne 50 ohm 50 ohm 50 ohm 50 ohm 50 ohm 50 ohm c3 dni 1 1 3 3 5 5 7 7 2 2 4 4 6 6 8 8 10 10 12 12 14 14 13 13 9 9 11 11 j8 header 14 j1 c4 dni c2 dni r2 1m 13 rf1 14 n/c 15 rf2 16 n/c 1 n/c 2 vdd 3 v2 4 v1 5 n/c 7 n/c 6 rf4 8 rf3 9 n/c 10 n/c 12 n/c 11 rfc u1 pe423641 c1 dni j2 j3 j4 j5 j6 j7 r1 1m rf1 v2 v1 rf2 vdd rf4 rf3 ant figure 13. evaluation board schematic doc-12427 caution: contains parts and assemblies susceptib le to damage by electrostatic discharge (esd).
product specification pe423641 page 10 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 ultracmos ? rfic solutions figure 14. package drawing 16-lead 3x3 mm qfn doc-01881 figure 15. top marking specification 423641 yyww zzzzzz doc-51207 = pin 1 designator yyww = date code, last two digits of the year and work week zzzzzz = last six characters of the assembly lot code top view side view bottom view 3.00 3.00 pin #1 corner 1.700.05 0.750.05 0.05 0.203 recommended land pattern 13 16 1 4 5 9 8 12 1.700.05 0.50 0.230.05 (x16) 1.50 0.3750.05 (x16) 1.75 3.40 3.40 0.10 c a b 0.05 c a 0.10 c (2x) c 0.10 c 0.05 c seating plane b all features 0.10 c (2x) 0.575 (x16) 0.28 (x16) 0.50 1.75 (x12)
product specification pe423641 page 11 of 11 ?2013-2014 peregrine semiconductor corp. all rights reserved. document no. doc-12414-2 www.psemi.com device orientation in tape top of device pin 1 tape feed direction figure 16. tape and reel specifications table 6. ordering information order code description package shipping method pe423641mlaa-z pe423641 sp4t rf switch green 16-lead 3 x 3 mm qfn 3000 units / t&r EK423641-01 pe423641 evaluation ki t evaluation kit 1 / box advance information : the product is in a formative or design stage. the datasheet contains design target specifications for product development. specifications and features may change in any manner without notice. preliminary specification: the datasheet contains preliminary data. additional data may be added at a later date. peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. product specification: the datasheet contains final data. in the event peregrine decides to change the specifications, peregrine will notify custom ers of the intended changes by issuing a cnf (customer notification form). the information in this datasheet is believed to be reliable. however, peregrine assumes no liability for the use of this information. use shall be entirely at the user?s own risk. no patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party. peregrine?s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the peregrine product could create a situation in which personal injury or death might occur. peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. the peregrine name, logo, ultracmos and utsi are registered trademarks and harp, multiswitch and dune are trademarks of peregrine semiconductor corp. peregr ine products are protected under one or more of the following u.s. patents: http://patents.psemi.com . sales contact and information for sales and contact information please visit www.psemi.com .

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